Semiconductor material: germanium, silicon, gallium arsenide, silicon carbide
Structure: BJT, JFET, IGFET (MOSFET), IGBT,
"other types"
Polarity: NPN, PNP, N-channel, P-channel
Maximum power rating: low, medium, high
Maximum operating frequency: low, medium, high, radio frequency (RF), microwave (The maximum effective frequency of a transistor is denoted by the term fT, an abbreviation for "frequency of transition." The frequency of transition is the frequency at which the transistor yields unity gain).
Application: switch, general purpose, audio, high voltage, super-beta, matched pair
Physical packaging: through hole metal, through hole plastic, surface mount, ball grid array
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API Electronics Inc.
Central Semiconductor
Continental Device
Diodes Inc.
Ericsson
Infineon
Linear Integrated Systems
Micro Electronics Corp.
Micropac Industries Inc.
MicroWave Technology
MOSPEC Semiconductor
Mpulse Microwave
National
NEC
NTE
NXP
ON Semiconductor
PowerTech
Renesas Technology Corp
Semelab
Semicoa Semiconductor
Semiconductor Technology, Inc Sensitron Semiconductor
Solid State Devices Inc.
Solitron Devices Inc.
STMicroelectronics
Surge Components Inc.
Transys Electronics
Vishay
Zetex Semiconductors |
