|Semiconductor material: germanium, silicon, gallium arsenide, silicon carbide
Structure: BJT, JFET, IGFET (MOSFET), IGBT,
Polarity: NPN, PNP, N-channel, P-channel
Maximum power rating: low, medium, high
Maximum operating frequency: low, medium, high, radio frequency (RF), microwave (The maximum effective frequency of a transistor is denoted by the term fT, an abbreviation for "frequency of transition." The frequency of transition is the frequency at which the transistor yields unity gain).
Application: switch, general purpose, audio, high voltage, super-beta, matched pair
Physical packaging: through hole metal, through hole plastic, surface mount, ball grid array
|API Electronics Inc.
Linear Integrated Systems
Micro Electronics Corp.
Micropac Industries Inc.
Renesas Technology Corp
Semiconductor Technology, Inc Sensitron Semiconductor
Solid State Devices Inc.
Solitron Devices Inc.
Surge Components Inc.